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陈中 <br>美国阿肯色大学电子工程系副教授。美国北卡罗来纳州立大学博士,新加坡国立大学硕士,浙江大学本科。曾任职于美国德州仪器公司模拟技术研发部,负责集成芯片静电保护的研发。在德州仪器任职的七年期间,为汽车电子,功率模块,高速芯片,接口芯片等提供完善的静电保护方案。现任 IEEE IRPS 和 EOS/ESD Symposium技术委员会成员。研究内容包括新型极端环境半导体器件,集成芯片及系统级静电保护及可靠性,功率电子及功率器件,宽带隙半导体材料,器件及封装。 <br> <br>Zhong Chen <br>Associate Professor <br>(ENGR)-Engineering <br>(ELEG)-Electrical Engineering <br> <br>Dr. Zhong Chen is currently an Associate Professor in Electrical Engineering at University of Arkansas. He received his PhD in Electrical and Computer Engineering from North Carolina State University, a Master’s in Electrical and Computer Engineering from the National University of Singapore, and a Bachelor degree from Zhejiang University. Dr. Chen worked for seven years as ESD specialist in Analog Technology Development at Texas Instruments (TI). At TI, he has been providing ESD solutions for various analog and digital applications in automotive, power management, power interface, high-speed product, audio and imaging products and motor drives. In his research, Chen focuses on novel device for harsh environment, integrated circuit (IC) and system level ESD and reliability; power electronics and power devices; wide-bandgap material, devices and packaging. His research work has been sponsored by various federal agencies and industry for near $1M. He is currently a technical committee member for the International Reliability Physics Symposium (IRPS) and the Electrical Overstress / Electrostatic Discharge (EOS/ESD) Symposium. <br> <br>https://electrical-engineering.uark.edu/directory/index/uid/chenz/name/Zhong+Chen/
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